tm january 2011 FCH25N60N n-channel mosfet ?2011 fairchild semiconductor corporation FCH25N60N rev. a2 www.fairchildsemi.com 1 supremos? FCH25N60N n-channel mosfet 600v, 25a, 0.126 features ?r ds(on) = 0.108 ( typ.) at v gs = 10v, i d = 12.5a ? u ltra low gate charge ( typ. qg = 57nc) ? low effective output capacitance ? 100% avalanche tested ? rohs compliant description the supremos mosfet, fairchilds next generation of high voltage super-junction mosfets, employs a deep trench filling process that differentiates it fr om preceding multi-epi based tech- nologies. by utilizing this adv anced technology and precise pro- cess control, supremos provi des world class rsp, superior switching performance and ruggedness. this supremos mosf et fits the industry s ac-dc smps requirements for pfc, server/telecom power, fpd tv power, atx power, and industrial power applications. d g s g s d to-247 mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter FCH25N60N units v dss drain to source voltage 600 v v gss gate to source voltage 30 v i d drain current continuous (t c = 25 o c) 25 a continuous (t c = 100 o c) 16 i dm drain current pulsed (note 1) 75 a e as single pulsed avalanche energy (note 2) 861 mj i ar avalanche current 8.3 a e ar repetitive avalanche energy 2.2 mj dv/dt peak diode recovery dv/dt (note 3) 20 v/ns mosfet dv/dt 100 p d power dissipation (t c = 25 o c) 216 w derate above 25 o c1 . 7 2 w / o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds 300 o c symbol parameter FCH25N60N units r jc thermal resistance, junction to case 0.58 o c/w r cs thermal resistance, case to heat sink (typical) 0.24 r ja thermal resistance, junction to ambient 40 *drain current limited by maximum junction temperature
FCH25N60N n-channel mosfet FCH25N60N rev. a2 www.fairchildsemi.com 2 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics device marking device package reel size tape width quantity FCH25N60N FCH25N60N to247 - - 30 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 1ma, v gs = 0v,t j = 25 o c600--v bv dss t j breakdown voltage temperature coefficient i d = 1ma, referenced to 25 o c - 0.74 - v/ o c i dss zero gate voltage drain current v ds = 480v, v gs = 0v - - 10 a v ds = 480v, t j = 125 o c - - 100 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a 2.0 - 4.0 v r ds(on) static drain to source on resistance v gs = 10v, i d = 12.5a - 0.108 0.126 g fs forward transconductance v ds = 20v, i d = 12.5a - - s c iss input capacitance v ds = 100v, v gs = 0v f = 1mhz - 2520 3352 pf c oss output capacitance - 103 137 pf c rss reverse transfer capacitance - 3.2 5 pf c oss output capacitance v ds = 380v, v gs = 0v, f = 1mhz - 55 - pf c oss eff. effective output capacitance v ds = 0v to 480v, v gs = 0v - 262 - pf q g(tot) total gate charge at 10v v ds = 380v, i d = 12.5a, v gs = 10v (note 4) -5774nc q gs gate to source gate charge - 10 - nc q gd gate to drain miller charge - 18 - nc esr equivalent series resistanc e (g-s) drain open, f=1mhz - 1 - t d(on) turn-on delay time v dd = 380v, i d = 12.5a r g = 4.7 (note 4) -2152ns t r turn-on rise time - 22 54 ns t d(off) turn-off delay time - 68 146 ns t f turn-off fall time - 5 20 ns i s maximum continuous drain to source diode forward current - - 25 a i sm maximum pulsed drain to source diode forward current - - 75 a v sd drain to source diode forward voltage v gs = 0v, i sd = 12.5a - - 1.2 v t rr reverse recovery time v gs = 0v, i sd = 12.5a di f /dt = 100a/ s - 370 - ns q rr reverse recovery charge - 7 - c notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. i as = 8.3a, r g = 25 , starting t j = 25 c 3. i sd 25a, di/dt 200a/ s, v dd 380v, starting t j = 25 c 4. essentially independent of operating temperature typical characteristics
FCH25N60N n-channel mosfet FCH25N60N rev. a2 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.05 0.1 1 10 30 0.3 1 10 100 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15v 10v 8v 6v 4v 2468 1 10 100 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 20406080 100 150 200 250 300 350 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ m ] , drain-source on-resistance i d , drain current [a] 0.4 0.6 0.8 1.0 1.2 1 10 100 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 102030405060 0 2 4 6 8 10 *note: i d = 12.5a v ds = 120v v ds = 300v v ds = 480v v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 100 600 10 0 10 1 10 2 10 3 10 4 10 5 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v]
FCH25N60N n-channel mosfet FCH25N60N rev. a2 www.fairchildsemi.com 4 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 0.5 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.58 o c/w max. 2. duty factor, d = t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse thermal response [ z jc ] rectangular pulse duration [sec] typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case tempe rature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 1ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 12.5a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 25 50 75 100 125 150 0 5 10 15 20 25 30 i d , drain current [a] t c , case temperature [ o c ] 1 10 100 1000 0.01 0.1 1 10 100 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc t 1 p dm t 2
FCH25N60N n-channel mosfet FCH25N60N rev. a2 www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FCH25N60N n-channel mosfet FCH25N60N rev. a2 www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FCH25N60N n-channel mosfet FCH25N60N rev. a2 www.fairchildsemi.com 7 mechanical dimensions to-247-3l dimensions in millimeters
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